- In February 2025, the National Institute of Advanced Industrial Science and Technology (AIST) and NGK Insulators Ltd announced a joint research initiative aimed at developing high-accuracy methods for evaluating the thermal diffusivity of silicon nitride ceramic substrates. This collaboration intends to meet the rising demand for reliable evaluation techniques for thinner substrates
- In January 2025, Wave Photonics introduced the SiNQ process, a silicon nitride platform fabricated by CORNERSTONE, designed for quantum systems and emitters with broad wavelength support ranging from 493nm to 1550nm. The process includes a 1056-element PDK that incorporates fabrication-aware S-Parameters for circuit modeling and is compatible with tools such as GDSFactory, Siemens L-Edit, and soon Luceda’s IPKISS, improving design accuracy and integration
- In July 2024, the Manufacturing Technology Centre (MTC) invested in a new hub dedicated to sustainable additive manufacturing, supporting the development of net-zero products with complete circularity. The facility will feature a Lithoz CeraFab S65 for processing materials such as alumina, silicon nitride, and aluminum nitride, along with a Carbon M3 for high-performance polymer printing. In addition, polymer granulation and feedstock forming systems will be implemented to establish a fully circular polymer manufacturing process chain
- In March 2022, Cambridge GaN Devices Ltd, a fabless semiconductor company, emerged from stealth mode to unveil its first product portfolio designed to reduce power losses by up to 50%. Marking its debut at APEC (Applied Power Electronics Conference), the company introduced the ICeGaN 650 V H1 series, which consists of four 650 V products leveraging Gallium Nitride-based technology for enhanced efficiency
- In May 2021, Raytheon Technologies, a leading aerospace and defense technology company, partnered with GlobalFoundries, a global leader in feature-rich semiconductor manufacturing, to develop and commercialize a new gallium nitride on silicon (GaN-on-Si) semiconductor. This innovation is set to revolutionize radio frequency performance for 5G and 6G mobile and wireless infrastructure applications
