- In April 2024, Infineon Technologies AG announced the expansion of its SiC (Silicon Carbide) production capacity at its Kulim fab in Malaysia to meet surging global demand for electric vehicles and renewable energy applications. This strategic move reinforces Infineon’s commitment to supporting the accelerating shift towards clean energy and e-mobility by ensuring reliable supply of high-efficiency Wide-Bandgap power semiconductor devices.
- In March 2024, STMicroelectronics introduced its third-generation 1200V SiC MOSFETs targeting high-power industrial and automotive applications. These new devices provide enhanced energy efficiency and system compactness, further strengthening ST’s leadership in the SiC WBG segment. The launch supports the increasing demand for power-efficient solutions in EV chargers, solar inverters, and motor drives.
- In February 2024, ROHM Co., Ltd. unveiled its next-gen GaN (Gallium Nitride) power devices featuring integrated gate drivers, designed for compact and high-efficiency power supply units. These devices are optimized for high-frequency switching, supporting applications such as data centers and telecom power systems, and further expanding ROHM’s WBG product portfolio.
- In January 2024, Transphorm Inc. announced the volume production of its automotive-grade GaN FETs, marking a major step towards mainstream adoption of GaN-based Wide-Bandgap devices in electric vehicles. The devices are qualified to AEC-Q101 standards and are designed for use in EV onboard chargers and DC-DC converters, offering higher power density and thermal performance.
- In December 2023, Qorvo, Inc. launched a new line of GaN-based power transistors tailored for 5G base stations and aerospace applications. These products offer superior frequency handling and power efficiency, aimed at addressing the increasing performance needs in high-reliability communication systems. The move highlights Qorvo’s strategic focus on expanding its WBG semiconductor offerings into advanced RF and power markets.
