“Increasing Integration of Aluminum Nitride in Power Semiconductor Modules”
- The growing reliance on aluminum nitride in power electronics is driven by its high thermal conductivity, which surpasses 170 W/m·K, making it ideal for dissipating heat in densely packed electronic systems especially in electric vehicles and renewable energy infrastructure where thermal performance is critical for reliability and longevity
- The need for miniaturized, high-efficiency power modules is propelling manufacturers to shift from alumina to aluminum nitride substrates due to the latter’s better heat resistance and low dielectric loss which strengthens AlN’s position in high-voltage and high-frequency applications
- For instance, Mitsubishi Electric has incorporated AlN substrates into advanced IGBT modules enhancing heat dissipation and improving the lifespan of devices in electric mobility applications helping maintain performance under demanding conditions
- Aluminum nitride’s role in radio frequency (RF) modules and 5G telecommunications is expanding as its properties help maintain stable signal transmission and prevent overheating in compact base station designs supporting accelerated global 5G deployment
- Semiconductor companies such as Infineon Technologies have started using AlN ceramics in their GaN and SiC-based power devices benefiting from aluminum nitride’s superior thermal insulation and enabling safe operation in high-power, high-speed switching environments
