“Integration of Atomic Layer Etching (ALE) for Sub-5nm Semiconductor Nodes”
- A major trend reshaping the dielectric etchers market is the growing adoption of atomic layer etching (ALE) techniques, especially in advanced semiconductor manufacturing for sub-5nm technology nodes.
- ALE enables angstrom-level precision, reduced plasma-induced damage, and superior profile control—making it ideal for high-aspect-ratio structures and 3D architectures like FinFETs and GAA transistors.
- For instance, in March 2025, Lam Research unveiled its latest ALE platform optimized for high-volume manufacturing at 3nm and below. The system is now deployed across major foundries in Taiwan and South Korea to meet the scaling demands of AI and HPC chips.
- This trend reflects the industry's shift toward precision-controlled, low-damage etching technologies essential for next-gen logic and memory device fabrication.
