Global GaN and SiC Power Semiconductor Market, By Product (Sic Power Module, GaN Power Module, Discrete SiC, Dicrete GaN), Application (Power Supplies, Industrial Motor Drives, H/EV, PV Inverters, Traction, Others), Country (U.S., Canada, Mexico, Brazil, Argentina, Rest of South America, Germany, Italy, U.K., France, Spain, Netherlands, Belgium, Switzerland, Turkey, Russia, Rest of Europe, Japan, China, India, South Korea, Australia, Singapore, Malaysia, Thailand, Indonesia, Philippines, Rest of Asia-Pacific, Saudi Arabia, U.A.E, South Africa, Egypt, Israel, Rest of Middle East and Africa) Industry Trends and Forecast to 2028.
GaN and SiC power semiconductor market will reach at an estimated value of USD 1568.98 million by 2028 and grow at a CAGR of 30.05% in the forecast period of 2021 to 2028. Rise in the usage of power devices in renewable energy applications is an essential factor driving the GaN and SiC power semiconductor market.
GaN is defined as a material that are mainly used for the development of different semiconductor power devices, light emitting diodes and RF components. SiC or silicon carbide is a semiconductor which is made from silicon and carbide. These GaN and SiC power semiconductor are wide used in applications such as traction, industrial motor devices, PV inverters, power supplies and others.
Rise in the growth in the semiconductor industry is a crucial factor accelerating the market growth, also increase in the popularity of electric vehicles, increase in the adoption of 5G technology, rise in the investment in infrastructure development, rise in the research and development in wide band gap semiconductors (WBG) , rise in the use of power devices in renewable energy applications and rise in the growth of hybrid and electric vehicles market are the major factors among others boosting the GaN and SiC power semiconductor market. Moreover, rise in the research and development activities and increase in the technological advancements and modernization in the production techniques will further create new opportunities for GaN and SiC power semiconductor market in the forecast period mentioned above.
However, increase in the manufacturing cost and rise in the usage of conventional silicon materials for manufacturing are the major factors among others restraining the market growth, and will further challenge the GaN and SiC power semiconductor market in the forecast period mentioned above.
This GaN and SiC power semiconductor market report provides details of new recent developments, trade regulations, import export analysis, production analysis, value chain optimization, market share, impact of domestic and localised market players, analyses opportunities in terms of emerging revenue pockets, changes in market regulations, strategic market growth analysis, market size, category market growths, application niches and dominance, product approvals, product launches, geographic expansions, technological innovations in the market. To gain more info on GaN and SiC power semiconductor market contact Data Bridge Market Research for an Analyst Brief, our team will help you take an informed market decision to achieve market growth.
GaN and SiC Power Semiconductor Market Scope and Market Size
GaN and SiC power semiconductor market is segmented on the basis of product and application. The growth among segments helps you analyse niche pockets of growth and strategies to approach the market and determine your core application areas and the difference in your target markets.
- On the basis of product, GaN and SiC power semiconductor market is segmented into sic power module, gan power module and discrete sic, and dicrete gan.
- The GaN and SiC power semiconductor market is also segmented on the basis of application into power supplies, industrial motor drives, h/ev, pv inverters, traction and others.
GaN and SiC Power Semiconductor Market Scope Country Level Analysis
GaN and SiC power semiconductor market is analysed and market size, volume information is provided by country, product and application as referenced above.
The countries covered in the GaN and SiC power semiconductor market report are U.S., Canada and Mexico in North America, Brazil, Argentina and Rest of South America as part of South America, Germany, Italy, U.K., France, Spain, Netherlands, Belgium, Switzerland, Turkey, Russia, Rest of Europe in Europe, Japan, China, India, South Korea, Australia, Singapore, Malaysia, Thailand, Indonesia, Philippines, Rest of Asia-Pacific (APAC) in the Asia-Pacific (APAC), Saudi Arabia, U.A.E, South Africa, Egypt, Israel, Rest of Middle East and Africa (MEA) as a part of Middle East and Africa (MEA).
North America dominates the GaN and SiC power semiconductor market due to increase in the popularity of electric vehicles, increase in the adoption of 5G technology and rise in the investment of infrastructure development.
The country section of the GaN and SiC power semiconductor market report also provides individual market impacting factors and changes in regulation in the market domestically that impacts the current and future trends of the market. Data points like down-stream and upstream value chain analysis, technical trends and porter's five forces analysis, case studies are some of the pointers used to forecast the market scenario for individual countries. Also, the presence and availability of global brands and their challenges faced due to large or scarce competition from local and domestic brands, impact of domestic tariffs and trade routes are considered while providing forecast analysis of the country data.
Competitive Landscape and GaN and SiC Power Semiconductor Market Share Analysis
GaN and SiC power semiconductor market competitive landscape provides details by competitor. Details included are company overview, company financials, revenue generated, market potential, investment in research and development, new market initiatives, regional presence, company strengths and weaknesses, product launch, product width and breadth, application dominance. The above data points provided are only related to the companies’ focus related to GaN and SiC power semiconductor market.
The major players covered in GaN and SiC power semiconductor market report are Alpha and Omega Semiconductor, Fuji Electric Co., Ltd, Infineon Technologies AG, Littelfuse, Inc., Microsemi, Mitsubishi Electric Corporation, Renesas Electronics Corporation, ROHM SEMICONDUCTOR, SANKEN ELECTRIC CO.,LTD., STMicroelectronics, Epiluvac, IQE PLC, Transphorm Inc., SweGaN, Saint-Gobain, GeneSiC Semiconductor Inc.., Sublime Technologies, Global Power Technologies Group, DACO SEMICONDUCTOR CO.,LTD., AGC Inc., Dow and WeEn Semiconductors among other domestic and global players. Market share data is available for global, North America, Europe, Asia-Pacific (APAC), Middle East and Africa (MEA) and South America separately. DBMR analysts understand competitive strengths and provide competitive analysis for each competitor separately.
Customization Available : Global GaN and SiC Power Semiconductor Market
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