“Rising Adoption of Wide Bandgap Semiconductors for Energy Efficiency”
- Silicon Carbide (SiC) and Gallium Nitride (GaN) power semiconductors are increasingly preferred due to their superior energy efficiency and lower power losses compared to traditional silicon-based semiconductors
- These wide bandgap materials enable higher operating temperatures, faster switching speeds, and reduced energy losses, making them ideal for high-performance applications
- In electric vehicles (EVs), SiC power modules are favored for their ability to handle high voltages and temperatures, enhancing efficiency in inverters and onboard chargers
- GaN power modules are gaining traction in telecommunications and consumer electronics due to their high switching speeds and compact designs, particularly in fast chargers and 5G infrastructure
- For instance, companies such as Infineon Technologies and Navitas Semiconductor are integrating GaN and SiC solutions into EV charging systems and renewable energy inverters to improve performance and reduce energy consumption
- Automotive manufacturers are increasingly incorporating SiC and GaN semiconductors as standard components in hybrid and electric vehicles (H/EVs) to optimize powertrain efficiency and extend driving range
- Renewable energy applications, such as photovoltaic (PV) inverters and wind turbine converters, are adopting SiC and GaN for their ability to maximize energy output and minimize power losses
