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Global GaN Power Device Market – Industry Trends and Forecast to 2028

Semiconductors and Electronics

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Global GaN Power Device Market – Industry Trends and Forecast to 2028

  • Semiconductors and Electronics
  • Upcoming Report
  • Jun 2021
  • Global
  • 350 Pages
  • No of Tables:
  • No of Figures:

Global GaN Power Device Market, By Device Type (Power Device, RF Power Device, GaN Power Modules, GaN Power Discrete Devices,  GaN Power ICs), Voltage Range (600 Volt), Application (Power Drives, Supply and Inverter, Radio Frequency), Vertical (Telecommunications, Industrial, Automotive, Renewable, Consumer and Enterprise, Military, Defense and Aerospace, Medical), Technology (4H-SiC MOSFET, HEMT, Others), Wafer Material (GaN SiC, GaN Si),  Wafer Size (Less than 150mm, 150mm-500mm, More than 500 mm), Country (U.S., Canada, Mexico, Brazil, Argentina, Rest of South America, Germany, Italy, U.K., France, Spain, Netherlands, Belgium, Switzerland, Turkey, Russia, Rest of Europe, Japan, China, India, South Korea, Australia, Singapore, Malaysia, Thailand, Indonesia, Philippines, Rest of Asia-Pacific, Saudi Arabia, U.A.E, South Africa, Egypt, Israel, Rest of Middle East and Africa) Industry Trends and Forecast to 2028 

GaN Power Device Market Market Analysis and Insights : Global GaN Power Device Market

The GaN power device market is expected to witness market growth at a rate of 49.95% in the forecast period of 2021 to 2028. Data Bridge Market Research report on GaN power device market provides analysis and insights regarding the various factors expected to be prevalent throughout the forecast period while providing their impacts on the market’s growth.  

Gallium nitride (GaN) transistors have progressed as an improved performance alternative of silicon-based transistors, due to their capacity of constructing more dense devices for an assumed resistance value and breakdown voltage in comparison to the silicon devices.

Major factors that are expected to boost the growth of the GaN power device market in the forecast period are the vast revenue generation from the customer electronics and automotive verticals and the wide bandgap property of GaN material supporting innovation. Furthermore, the
achievement of GaN in the RF-power electronics, the rise in the acceptance and the growing adoption of GaN RF power device in military, defense, and aerospace vertical are further propelling the growth of the GaN power device market.

On the other hand, the struggle from sic devices in the high-voltage power applications is further expected to obstruct the growth of the GaN power device market in the timeline period. In addition, the potential utilization of GaN in 5g infrastructure
applications in the electric and hybrid electric vehicles will further provide lucrative opportunities for the growth of the GaN power device market in the coming years. However, the increase in the material and construction prices and the design tasks and difficulty might further challenge the growth of the GaN power device market in near future.

This GaN power device market report provides details of new recent developments, trade regulations, import export analysis, production analysis, value chain optimization, market share, impact of domestic and localised market players, analyses opportunities in terms of emerging revenue pockets, changes in market regulations, strategic market growth analysis, market size, category market growths, application niches and dominance, product approvals, product launches, geographic expansions, technological innovations in the market. To gain more info on the GaN power device market contact Data Bridge Market Research for an Analyst Brief, our team will help you take an informed market decision to achieve market growth.                                                              

GaN Power Device Market Scope and Market Size

The GaN power device market is segmented on the basis of device type, voltage range, application, vertical, technology, wafer material and wafer size. The growth among segments helps you analyse niche pockets of growth and strategies to approach the market and determine your core application areas and the difference in your target markets. 

  • On the basis of device type, the GaN power device market is segmented into power device, RF power device, GaN power modules, GaN power discrete devices, GaN power ICs. Power device is further sub segmented into discrete power device and integrated power device. RF power device is further sub segmented into discrete RF power device and integrated RF power device. GaN power discrete devices is further sub segmented into GaN power non-RF devices and GaN power RF devices. GaN power ICs is further sub segmented into MMIC and hybrid.
  • On the basis of voltage range, the GaN power device market is segmented into <200 volt, 200–600 volt, >600 volt),
  • On the basis of application, the GaN power device market is segmented into power drives, supply and inverter, radio frequency. Power drives is further sub segmented into EV drives, industrial drives and light detection and ranging. Supply and inverter is further sub segmented into switch-mode power supply, inverter, wireless charging and EV charging. Radio frequency is further sub segmented into radio frequency front-end module, repeater/booster/das and radar and satellite.
  • On the basis of vertical, the GaN power device market is segmented into telecommunications, industrial, automotive, renewable, consumer and enterprise, military, defense and aerospace, medical.
  • On the basis of technology, the GaN power device market is segmented into 4h-SIC MOSFET, HEMT, others.
  • On the basis of wafer material, the GaN power device market is segmented into GaN SiC, GaN Si.
  • On the basis of wafer size, the GaN power device market is segmented into less than 150mm, 150mm-500mm, more than 500 mm.

GaN Power Device Market Country Level Analysis

The GaN power device market is analysed and market size, volume information is provided by country, device type, voltage range, application, vertical, technology, wafer material and wafer size as referenced above.   

The countries covered in the GaN power device market report are the U.S., Canada and Mexico in North America, Brazil, Argentina and Rest of South America as part of South America, Germany, Italy, U.K., France, Spain, Netherlands, Belgium, Switzerland, Turkey, Russia, Rest of Europe in Europe, Japan, China, India, South Korea, Australia, Singapore, Malaysia, Thailand, Indonesia, Philippines, Rest of Asia-Pacific (APAC)  in the Asia-Pacific (APAC), Saudi Arabia, U.A.E, South Africa, Egypt, Israel, Rest of Middle East and Africa (MEA) as a part of Middle East and Africa (MEA).  

North America dominates the GaN power device market due to the rise in the investments by the defense and aerospace sector in the research and development. Furthermore, the increase in the acceptance of energy effective devices and offering contracts to several companies that are functioning which will further boost the growth of the GaN power device market in the region during the forecast period. Asia Pacific is projected to observe significant amount of growth in the GaN power device market due to the swift technological developments that are leading to the augmented demand for effective and high-performance RF components. Moreover, a substantial increase in the acceptance of wireless electronic devices and the production of telecommunication infrastructure is further anticipated to propel the growth of the GaN power device market in the region in the coming years.

The country section of the report also provides individual market impacting factors and changes in regulation in the market domestically that impacts the current and future trends of the market. Data points like down-stream and upstream value chain analysis, technical trends and porter's five forces analysis, case studies are some of the pointers used to forecast the market scenario for individual countries. Also, the presence and availability of global brands and their challenges faced due to large or scarce competition from local and domestic brands, impact of domestic tariffs and trade routes are considered while providing forecast analysis of the country data.

Competitive Landscape and GaN Power Device Market Share Analysis

The GaN power device market competitive landscape provides details by competitor. Details included are company overview, company financials, revenue generated, market potential, investment in research and development, new market initiatives, regional presence, company strengths and weaknesses, product launch, product width and breadth, application dominance. The above data points provided are only related to the companies’ focus related to GaN power device market.

The major players covered in the GaN power device market report are Cree, Inc., Infineon Technologies AG, Qorvo, Inc., MACOM, Microsemi, Mitsubishi Electric Corporation, Efficient Power Conversion Corporation., GaN Systems, Navitas Semiconductor., Toshiba Electronic Devices & Storage Corporation, Exagan., VisIC Technologies, Integra Technologies, Inc., Transphorm Inc., GaNpower, Analog Devices, Inc., Panasonic Corporation, Texas Instruments Incorporated., Ampleon, Northrop Grumman, Dialog Semiconductor, among other domestic and global players. Market share data is available for global, North America, Europe, Asia-Pacific (APAC), Middle East and Africa (MEA) and South America separately. DBMR analysts understand competitive strengths and provide competitive analysis for each competitor separately.


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Research Methodology:

Data collection and base year analysis are done using data collection modules with large sample sizes. The stage includes obtaining market information or related data through various sources and strategies. It includes examining and planning all the data acquired from the past in advance. It likewise envelops the examination of information inconsistencies seen across different information sources. The market data is analysed and estimated using market statistical and coherent models. Also, market share analysis and key trend analysis are the major success factors in the market report. To know more, please request an analyst call or drop down your inquiry.

The key research methodology used by DBMR research team is data triangulation which involves data mining, analysis of the impact of data variables on the market and primary (industry expert) validation. Data models include Vendor Positioning Grid, Market Time Line Analysis, Market Overview and Guide, Company Positioning Grid, Patent Analysis, Pricing Analysis, Company Market Share Analysis, Standards of Measurement, Global versus Regional and Vendor Share Analysis. To know more about the research methodology, drop in an inquiry to speak to our industry experts.

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FREQUENTLY ASK QUESTIONS

GaN Power Device Market to grow at a CAGR 49.95% by forecast 2028.
North America region holds the largest share in the market.
The major players covered in the GaN power device market report are Cree, Inc., Infineon Technologies AG, Qorvo, Inc., MACOM, Microsemi, Mitsubishi Electric Corporation, Efficient Power Conversion Corporation., GaN Systems, Navitas Semiconductor., Toshiba Electronic Devices & Storage Corporation, Exagan., VisIC Technologies, Integra Technologies, Inc., Transphorm Inc., GaNpower, Analog Devices, Inc., Panasonic Corporation, Texas Instruments Incorporated., Ampleon, Northrop Grumman, Dialog Semiconductor.
The countries covered in the GaN power device market report are the U.S., Canada and Mexico in North America, Brazil, Argentina and Rest of South America as part of South America, Germany, Italy, U.K., France, Spain, Netherlands, Belgium, Switzerland, Turkey, Russia, Rest of Europe in Europe, Japan, China, India, South Korea, Australia, Singapore, Malaysia, Thailand, Indonesia, Philippines, Rest of Asia-Pacific (APAC) in the Asia-Pacific (APAC), Saudi Arabia, U.A.E, South Africa, Egypt, Israel, Rest of Middle East and Africa (MEA) as a part of Middle East and Africa (MEA).
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