- In April 2024, Infineon Technologies AG launched a new portfolio of high-efficiency GaN power transistors designed to enhance power conversion efficiency in electric vehicles and renewable energy systems. This initiative underscores Infineon’s focus on advancing sustainable energy solutions by leveraging GaN technology to reduce energy losses and improve thermal management in critical applications.
- In March 2024, Qorvo, Inc. introduced its next-generation GaN RF power devices optimized for 5G infrastructure, supporting higher frequency bands and increased power density. This development reflects Qorvo’s commitment to enabling faster and more reliable wireless communication networks as global 5G adoption accelerates.
- In February 2024, Navitas Semiconductor announced a strategic collaboration with a leading EV manufacturer to integrate GaN power ICs into onboard chargers and inverters. This partnership aims to deliver faster charging times and improved vehicle efficiency, driving innovation in the electric vehicle market.
- In January 2024, GaN Systems unveiled a new compact GaN power module tailored for consumer electronics and fast wireless charging applications. The module’s small form factor and high efficiency cater to the growing demand for lightweight and portable charging solutions.
- In January 2024, Mitsubishi Electric Corporation expanded its GaN device manufacturing capabilities by investing in a new fabrication facility focused on silicon carbide (SiC) wafer substrates. This expansion is intended to meet increasing demand for high-performance GaN power devices across industrial and automotive sectors.
