- In June 2022, Qorvo introduced a 20W GaN-on-SiC power amplifier (QPA1724), targeting defense and commercial satellite applications, including low Earth orbit constellations. This product operates across the 17.3 to 21.2 GHz Ku-K Band and delivers twice the output power of competing solutions. Its compact surface-mount design, combined with superior wideband linear power, gain, and power-added efficiency, enhances system performance. This launch strengthens Qorvo’s position in the satellite communication segment, driving innovation and competitiveness in the RF amplifier market
- In January 2023, NXP Semiconductors announced its ongoing development of GaN-on-silicon technology for mmWave applications. According to RF Systems Engineering Director Geoff Tucker, the company is expanding its portfolio to include a broad range of RF power technologies such as GaN-on-silicon, silicon LDMOS, SiGe, and GaAs. This strategic move aims to meet rising demand for high-performance RF solutions across automotive, telecom, and industrial sectors, potentially accelerating growth and diversification in the global RF power device market
