- In December 2022, STMicroelectronics and Soitec announced the next stage of their cooperation on Silicon Carbide (SiC) substrates, with ST planning to qualify Soitec's SiC substrate technology over the next 18 months. This collaboration aims for the adoption of Soitec's SmartSiC technology for ST's future 200mm substrate manufacturing, supporting its devices and modules manufacturing. The volume production is expected in the midterm, potentially boosting ST's financials and contributing to the growth of the North America SiC power semiconductor market
- In July 2022, Semikron Danfoss and ROHM Semiconductor, after a decade-long collaboration, advanced their partnership with the qualification of ROHM's latest 4th generation SiC MOSFETs in SEMIKRON's eMPack modules for automotive applications. This collaboration serves global customer needs, enhances both companies' financials, and positively impacts the North America SiC power semiconductor market
- In August 2022, Toshiba Corporation launched its 3rd generation 650V and 1200V silicon carbide MOSFETs, which achieve a 20% reduction in switching losses in industrial equipment. This innovation aims to improve the efficiency and performance of industry
