The SiC (Silicon Carbide) power semiconductor market is at the forefront of technological advancement. SiC devices offer high efficiency and superior performance compared to traditional silicon semiconductors. They find applications in power electronics, electric vehicles, renewable energy systems, and industrial drives. SiC's key features include low power loss, high-temperature tolerance, and reduced size and weight. These advancements enable more compact and energy-efficient devices, driving innovations in various industries while contributing to sustainability efforts by reducing energy consumption and carbon emissions.
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Data Bridge Market Research analyses that the Global Sic Power Semiconductor Market which was USD 11,06,682 thousand in 2022 and is expected to reach a value of USD 7,030,515.23 thousand by 2030, at a CAGR of 26.0% during the forecast period of 2023-2030. SiC (Silicon Carbide) semiconductors play a pivotal role in reducing the size and weight of electronic systems. Their superior power efficiency and high-temperature tolerance make them essential in aerospace, automotive, and industrial applications, allowing for more compact and lightweight yet highly functional electronic components, contributing to improved overall system performance.
Key Findings of the Study
Industry 4.0 is expected to drive the market's growth rate
The industrial automation landscape is evolving rapidly with Industry 4.0. This transformation demands more efficient and reliable power electronics. SiC (Silicon Carbide) semiconductors are increasingly favored in this context due to their high-performance capabilities. They enable faster switching speeds, reduced heat generation, and improved power efficiency, aligning with the requirements of modern industrial automation systems. As industries seek to enhance productivity, reduce downtime, and optimize energy U.S.ge, the demand for SiC semiconductors continues to grow as a fundamental component of advanced power electronics in automation.
Report Scope and Market Segmentation
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Report Metric
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Details
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Forecast Period
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2023 to 2030
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Base Year
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2022
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Historic Years
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2021 (Customizable to 2015-2020)
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Quantitative Units
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Revenue in USD Thousand, Volumes in Units, Pricing in USD
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Segments Covered
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Type (MOSFETS, Hybrid Modules, Schottky Barrier Diodes (SBDS), IGBT, Bipolar Junction Transistor (BJT), Pin Diode, Junction FET (JFET), and Others), Voltage Range (301-900 V, 901-1700 V, Above 1701 V), Wafer size (6 Inch, 4 Inch, 2 Inch, Above 6 Inch), Wafer type (SiC Epitaxial Wafers, Blank SiC Wafers), Application (Electric Vehicles (EV), Photovoltaics, Power Supplies, Industrial Motor Drives, EV Charging Infrastructure, RF Devices, and Others), Vertical (Automotive, Utilities and Energy, Industrial, Transportation, IT and Telecommunication, Consumer Electronics, Aerospace and Defense, Commercial, and Others).
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Countries Covered
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U.S., Canada and Mexico in North America, Germany, France, U.K., Netherlands, Switzerland, Belgium, Russia, Italy, Spain, Turkey, Rest of Europe in Europe, China, Japan, India, South Korea, Singapore, Malaysia, Australia, Thailand, Indonesia, Philippines, Rest of Asia-Pacific (APAC) in the Asia-Pacific (APAC), Saudi Arabia, U.A.E, South Africa, Egypt, Israel, Rest of Middle East and Africa (MEA) as a part of Middle East and Africa (MEA), Brazil, Argentina and Rest of South America as part of South America
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Market Players Covered
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WOLFSPEED, INC. (U.S.), STMicroelectronics (Switzerland), ROHM CO., LTD. (Japan), Fuji Electric Co., Ltd. (Japan), Mitsubishi Electric Corporation (Japan), Texas Instruments Incorporated (U.S.), Infineon Technologies AG (Germany), Semikron Danfoss (Germany), Xiamen Powerway Advanced Material Co., Ltd. (China), Renesas Electronics Corporation (Japan), TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION (Japan), Microchip Technology Inc. (U.S.), Semiconductor Components Industries, LLC (U.S.), NXP Semiconductors (Netherlands), UnitedSiC (U.S.), SemiQ Inc. (U.S.), Littlefuse, Inc. (U.S.), Allegro MicroSystems, Inc. (U.S.), Hitachi Power Semiconductor Device, Ltd. (A Subsidiary of Hitachi Group) (Japan), GeneSiC Semiconductor Inc. (U.S.)
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Data Points Covered in the Report
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In addition to the insights on market scenarios such as market value, growth rate, segmentation, geographical coverage, and major players, the market reports curated by the Data Bridge Market Research also include in-depth expert analysis, geographically represented company-wise production and capacity, network layouts of distributors and partners, detailed and updated price trend analysis and deficit analysis of supply chain and demand.
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Segment Analysis:
The global SiC power semiconductor market is segmented on the basis of type, voltage range, wafer size, wafer type, application, and vertical.
- On the basis of type, the global SiC power semiconductor market is segmented intoMOSFETS, hybrid modules, schottky barrier diodes (SBDS), IGBT, bipolar junction transistor (BJT), pin Diode, junction FET (JFET) and other.
- On the basis of voltage range, the global SiC power semiconductor market is segmented into 301-900 V, 901-1700 V, and above 1701 V.
- On the basis of wafer size, the global SiC power semiconductor market is segmented into 6 Inch, 4 Inch, 2 Inch, and above 6 Inch.
- On the basis of the wafer type, the global SiC power semiconductor market is segmented into SiC epitaxial wafers and blank SiC wafers.
- On the basis of the application, the global sic power semiconductor market is segmented into electric vehicles (EV), photovoltaics, power supplies, industrial motor drives, EV charging infrastructure, RF devices, and others.
- On the basis of the vertical, the global SiC power semiconductor market is segmented into automotive, utilities and energy, industrial, transportation, IT and telecommunication, consumer electronics, aerospace and defense, commercial, and others.
Major Players
Data Bridge Market Research recognizes the following companies as the major global SiC power semiconductor market players in global SiC power semiconductor market are WOLFSPEED, INC. (U.S.), STMicroelectronics (Switzerland), ROHM CO., LTD. (Japan), Fuji Electric Co., Ltd. (Japan), Mitsubishi Electric Corporation (Japan), Texas Instruments Incorporated (U.S.), Infineon Technologies AG (Germany), Semikron Danfoss (Germany), Xiamen Powerway Advanced Material Co., Ltd. (China).
Market Developments
- In December 2022, STMicroelectronics and Soitec, known for their innovative semiconductor materials, revealed an expanded partnership focused on Silicon Carbide (SiC) substrates. ST is planning to qualify Soitec's SiC substrate technology within the next 18 months. The objective of this collaboration is for ST to adopt Soitec's SmartSiC technology for its upcoming 200mm substrate production, which will support its device and module manufacturing. This partnership is expected to enhance ST's financial performance and contribute to the growth of the global SiC power semiconductor market in the medium term.
- In July 2022, Semikron Danfoss and Kyoto-based ROHM Semiconductor have shared a decade-long collaboration focused on integrating silicon carbide (SiC) into power modules. ROHM's cutting-edge 4th generation SiC MOSFETs have recently received full qualification within SEMIKRON's eMPack modules designed for automotive applications. This successful partnership has allowed both companies to effectively meet the global demand of customers worldwide. It has not only contributed to improved financial performance but also positively influenced the expansion of the global SiC power semiconductor market.
Regional Analysis
Geographically, the countries covered in the major global SiC power semiconductor market report are U.S., Canada and Mexico in North America, Germany, France, U.K., Netherlands, Switzerland, Belgium, Russia, Italy, Spain, Turkey, Rest of Europe in Europe, China, Japan, India, South Korea, Singapore, Malaysia, Australia, Thailand, Indonesia, Philippines, Rest of Asia-Pacific (APAC) in the Asia-Pacific (APAC), Saudi Arabia, U.A.E, South Africa, Egypt, Israel, Rest of Middle East and Africa (MEA) as a part of Middle East and Africa (MEA), Brazil, Argentina and Rest of South America as part of South America.
As per Data Bridge Market Research analysis:
Asia-Pacific is expected to dominate the global SiC power semiconductor market during the forecast period 2023 - 2030
In 2023, the Asia-Pacific region is poised to assert its dominance in the global SiC power semiconductor market, driven by soaring demand for these advanced semiconductors. The region's appetite for power modules and associated devices is anticipated to serve as a significant growth catalyst. This surge reflects the robust demand for SiC power semiconductors across various industries and applications, underlining Asia-Pacific's pivotal role in steering the market's trajectory.
For more detailed information about the global SiC power semiconductor market report, click here – https://www.databridgemarketresearch.com/reports/global-sic-power-semiconductor-market
