The GAN epitaxial wafers market has seen rapid advancements due to the increasing demand for high-performance semiconductor materials in various applications such as power electronics, optoelectronics, and RF electronics. GAN (Gallium Nitride) epitaxial wafers are widely recognized for their superior thermal conductivity, high breakdown voltage, and efficiency at high frequencies, making them ideal for use in power devices, LEDs, and RF components. This has led to the rapid adoption of GAN wafers in applications like electric vehicles (EVs), renewable energy systems, 5G communication infrastructure, and LED lighting. The growing trend toward miniaturization and power efficiency across industries is also propelling the demand for GAN epitaxial wafers.
One of the most significant developments in the GAN epitaxial wafer market is the continuous improvements in wafer growth techniques, including MOCVD (Metal-Organic Chemical Vapor Deposition) and HVPE (Hydride Vapor Phase Epitaxy), which have led to the production of higher-quality wafers with fewer defects. These innovations have made GAN wafers more cost-effective and accessible for a broader range of applications.
