- In November 2024, Sumitomo Chemical's project to accelerate the development of large-diameter GaN-on-GaN wafers for power electronics has been selected by NEDO for FY 2024. The initiative aims to advance mass production technology for six-inch GaN-on-GaN wafers, targeting energy-efficient power electronics applications in sectors like electrical infrastructure, data centers, and electric vehicles
- In September 2024, Infineon Technologies AG has successfully developed the world’s first 300 mm power gallium nitride (GaN) wafer technology, enabling the production of 2.3 times more chips per wafer than 200 mm wafers. This breakthrough offers significant efficiency gains and cost reductions, facilitating the widespread adoption of GaN in industries like automotive, consumer electronics, and communications. Despite challenges such as stress and lattice mismatch between GaN and silicon, Infineon has leveraged innovative solutions, particularly at its Center of Competence for GaN EPI, to scale GaN technology for high-volume manufacturing
- In August 2024, MassPhoton Ltd, in collaboration with Hong Kong Science and Technology Parks Corporation (HKSTP), is launching Hong Kong's first GaN epitaxial wafer pilot line at InnoPark. This initiative, with a HK$200m investment, aims to advance the region's semiconductor industry and create over 250 jobs
- In August 2024, SweGaN AB reported 17 MSEK in orders for Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers in H1 2024, marking a 100% increase. The company secured major telecom and defense agreements, launched deliveries from a new facility, and completed successful customer qualification for its QuanFINE epiwafers
- In January 2022, IVWorks Co Ltd, based in South Korea, has acquired the GaN wafer business from Saint-Gobain, a French materials company. The acquisition strengthens IVWorks' capabilities in mass-producing 4- to 12-inch GaN epiwafers for power devices, including applications in EV powertrains and defense radars
